PART |
Description |
Maker |
BUZ900P BUZ901P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路)) N?CHANNEL POWER MOSFET
|
Magnatec Seme LAB
|
IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET?/a> Power MOSFETs Q-Class HiPerFET⑩ Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
AN1042 |
High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs 高保真开关音频放大器使用TMOS功率MOSFET
|
ON Semiconductor
|
IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
IXFH12N100Q IXFT12N100Q IXFH10N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
IXFE180N20 |
HiPerFET Power MOSFETs Single Die MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
IXFN44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
IRF520 MTP10N10 MTP10N08 IRF522 IRF522R IRF123 IRF |
IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs N-Channel Power MOSFETs, 11 A, 60-100 V Trans MOSFET N-CH 100V 7A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semiconductors New Jersey Semi-Conduct...
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